发光二极管（LED）在照明、显示、医疗、通信和智能传感等领域具有巨大的应用前景。新型锡基卤化物钙钛矿材料凭借其环境友好、溶液可加工、带隙连续可调、荧光量子效率高，以及低成本大面积制造的优势，迅速成为学术界和产业界所关注的热点。然而，锡基钙钛矿的结晶过程难以调控，导致薄膜缺陷密度高、非辐射复合严重，严重制约其电致发光性能。

对此，我院沈晓冬教授、滕彭彭博士团队提出埋底界面改性策略，调控锡基钙钛矿的形核和结晶动力学，成功制备出高性能近红外锡基钙钛矿LED。该团队通过引入羧酸盐作为多功能界面改性材料，提高了锡基钙钛矿的形核位点同时减缓了结晶速率，从而获得低缺陷密度较的锡基钙钛矿薄膜。该研究证明了羧酸盐在PEDOT:PSS基底上形成的密集氢键网络能降低钙钛矿的吉布斯自由能，从而减小接触角并增加成核位点。此外，与Sn²⁺具有强配位能力的修饰材料可以减缓锡基钙钛矿的结晶速率，获得高质量钙钛矿晶体，从而获得高外量子效率的锡基钙钛矿LED。基于此策略的锡基钙钛矿LED展现出11.9%的EQE，这是目前报道的近红外锡基钙钛矿LED的最高效率之一，该工作为高性能锡基钙钛矿光电器件的制备提供了一种高效、低成本的途径。

相关成果近期发表在《Angewandte Chemie International Edition》，文章第一作者是南京工业大学硕士研究生江政和副研究员杨洁，此外，南京工业大学材料科学与工程学院沈晓冬教授、滕彭彭博士为该论文的共同通讯作者。

论文链接：https://doi.org/10.1002/anie.202507914

Figure 1.(a, b) The contact angle of perovskite precursor solution without (a) and with FAAc (b) on PEDOT:PSS substrate. (c-f) SEM images of FA_0.9Cs_0.1SnI₃perovskite films without and with FAAc before (c, d) and after annealing (e, f), respectively.

Figure 2.(a, b) In-situ UV-vis measurements of Sn-based perovskites without (a) and with FAAc (b) during the annealing process. (c-f) In-situ PL measurements of Sn-based perovskites without (c, e) and with FAAc (d, f) during the annealing process.

Figure 3.(a) XRD patterns, #indicates the diffraction data from the ITO substrate, (b) PLQYs, and (c) TRPL of perovskite films fabricated without and with FAAc. (d)J-Vcurves of the holy-only devices without and with FAAc modification. (e) O 1s XPS spectra of PEDOT:PSS on silicon substrate, without and with FAAc modification, and the FAAc-modified samples was washed out by DMSO. (f)FTIR spectra of FAAc and the complex of FAAc and SnI₂.

Figure 4.(a, b) Schematic illustration of the device architecture (a) and energy-level diagram (b). (c-f) EQE-Jcurve (c),J-V-Rcurve (d), EL spectra (e) and histograms of maximum EQE (f) based on FA_0.9Cs_0.1SnI₃perovskite films without and with FAAc.